Samsung may soon bring 512GB storage chip to next-gen smartphones

Photo – samsung

Most smartphones offer an expandable storage of up to 64GB, 128GB or even 256GB. But now, Samsung aims to change that. The company will soon start mass production of the world’s first 512GB embedded Universal Flash Storage (eUFS), implying that the next-gen smartphones will be able to offer double the storage, of what it could last year.

Using Samsung’s 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package is said to provide unparalleled storage capacity and great performance for upcoming flagship smartphones and tablets. Consisting of eight 64-layer 512Gb V-NAND chips and a controller chip, the new 512GB UFS doubles the density of Samsung’s previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package.

The eUFS’ increased storage will enable a flagship smartphone to store approximately 130 4K Ultra HD (3840×2160) video clips of a 10-minute duration, which is an increase over a 64GB eUFS which allows storing only about 13 of the same-sized video clips.

The 512GB embedded memory will allow users to transfer a 5GB-equivalent full HD video clip to an SSD in about six seconds, over eight times faster than a typical microSD card.

“The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards,” said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. “By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world.”

Source – dnaindia.com